XRD摇摆曲线在单晶基片质量检测中的应用  

Application of XRD rocking Curve to evaluate The quality on single crystal substrates of film growing

作　　者：宁永功[1] 姬洪[1] 王志红[1] 刘爽[1] 

机构地区：[1]电子科技大学材料分析中心,成都610054

出　　处：《现代仪器》1999年第4期35-37,共3页Modern Instruments

摘　　要：本文试图采用倒易空间解释XRD摇摆曲线的物理意义,拓展摇摆曲线的使用范围,并提出用于检测单晶基片质量的几个方法:①基片表面机加工损伤程度分析;②基片表面缺陷分析;③切偏角的测定。将这些方法用于超导膜基片实际检测中,测出样品基片表面损伤程度的差异可达10倍左右(用基片表面晶粒的大小为衡量标准);切偏角在5°～0.7°之间;发现LaAlO_3基片在ab晶面常存在各种缺陷,直接影响超导膜的处延生长。This peper attemped to describe the rocking curve in XRD by reciprocal space and to expand the application of rocking curve. Especially applied to evaluate the surface quality of single crystal substrate, used for film growing. For example, analysis deviation angle, defects and damage on surface of substrates, several LaAlO3 Substrates were tested by the method. The results showed the deviation angle range from 0. 07皌o 5癮nd The surface damage degree of the different substrate was about ten times, referenced to the average size of graims on the surface damage area, the curve fine structure due to surface defects can usually be observed.

关 键 词：摇摆曲线 切偏角 X射线衍射 单晶基片 质量检测 

分 类 号：O484.5[理学—固体物理]