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机构地区:[1]上海交通大学金属基复合材料国家重点实验室,上海市200240 [2]上海工具厂有限公司 [3]上海交通大学
出 处:《工具技术》2011年第1期16-19,共4页Tool Engineering
基 金:国家科技支撑项目(2008BAF32B06);国家自然科学基金资助项目(U0774001)
摘 要:采用碳化锆靶通过磁控溅射方法制备一系列碳化锆薄膜,采用XRD、SEM、AFM和微力学探针研究溅射气压和基片温度对碳化锆薄膜的微结构和力学性能的影响。结果表明:低溅射气压下,薄膜呈现结晶良好的柱状晶结构,其硬度和弹性模量分别为30.1GPa、256GPa。溅射气压提高到2.0Pa以上后,薄膜的柱状晶结构受到破坏,晶粒减小,致密性降低,晶界强度亦降低,导致其硬度和弹性模量显著降低。基片温度提高到200℃以上后,薄膜呈现强烈的(111)择优取向,其硬度和弹性模量有所提高并保持稳定。Zirconium carbide flms were deposited on slaildess substrates using a 'compound ZrC target by magnetron sputtering. XRD, SEM, AFM and Nanoindentation were used to study the influence of argon pressure, and substrate temperature on mierostrueture and meehanieal properties of zirconium carbide films. The results showed that colunmar mystals were gained in the films at lower argon pressure and the fihns' hardness and modulus were 30.1 GPa and 256GPa. When argon pressure exeeeded 2.0Pa, columnar crystals in the films were destroyed, the columnar grain size, compactness and their grain - boundary strength of the films decreased, resulting in the marked reduction of their hardness and modulus. When substrate temperature exceeded 200℃, there was strong (111) preferred orientation in the fihns, and their hardness and modulus inereased and then stayed stable.
分 类 号:TG17[金属学及工艺—金属表面处理]
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