硅基铝掺杂氧化锌异质结太阳能电池的制备与性能研究  

Research on Fabrication and Properties of Al-doped Zinc Oxide Based on Silicon Heterojunction Solar Cells

作　　者：商世广[1] 赵玲[1] 贺永宁[2] 杜慧敏[1] 赵萍[1] 

机构地区：[1]西安邮电学院电子工程学院,西安710121 [2]西安交通大学电子与信息工程学院,西安710049

出　　处：《人工晶体学报》2010年第6期1499-1503,共5页Journal of Synthetic Crystals

基　　金：西安应用材料创新基金(XA-AM-201004);陕西省教育厅项目(2008JK822)

摘　　要：本文以绒面处理的P型硅(111)为衬底,利用磁控溅射、蒸发镀膜和热氧化等技术制备Al/P(cryst-Si∶H)/N(Al-Doped ZnO)/ITO结构的异质结太阳能电池,探讨ZnO薄膜的表面形貌、晶体结构以及衬底的可见光反射率等因素对其光电转化性能的影响。扫描电子显微镜分析显示,氧化锌薄膜是具有大量晶界的多孔隙结构。X射线衍射测试表明,氧化锌薄膜为六方纤锌矿晶体结构。太阳能电池的I-V特性测试显示,在绒面处理的硅基上制备的ZnO异质结太阳能电池具有较好的光伏特性,开路电压VOC为328 mV,短路电流密度JSC为5.83 mA/cm2,填充因子FF为0.602。Heterojunction solar cells with Al/P（cryst-Si∶H）/N（Al-Doped ZnO）/ITO structure were fabricated on P-type textured silicon substrates by magnetron sputtering,vacuum evaporation coating and thermal oxidation techniques.The influences of surface morphology and crystal structure of ZnO thin film,as well as visible light reflectivity of silicon substrate on the conversion efficiency were investigated.Scanning electron microscopy images show that zinc oxide film is a kind of pore structure with much grain boundary.X-ray diffraction analysis reveals that zinc oxide film has the hexagonal wurtzite structure.The current-voltage（I-V） characteristics of heterojunction solar cells were measured,and the results indicate that the solar cell based on P-type textured silicon substrate has better photovoltaic properties with open voltage VOC = 328 mV,short current density JSC =5.83 mA/cm2 and fill factor FF=0.602.

关 键 词：太阳能电池 磁控溅射 异质结 光伏特性 

分 类 号：TM914.4[电气工程—电力电子与电力传动]