重掺杂P型Si_(1-x)Ge_x层中少数载流子浓度的低温特性  

Low Temperature Characteristics of Minority Carrier Concentration in Heavily Doped p SiGe Layers

作　　者：张万荣 李志国[1] 孙英华[1] 程尧海[1] 陈建新[1] 沈光地[1] 

机构地区：[1]北京工业大学电子工程系,北京100022

出　　处：《微电子学》1999年第5期311-313,共3页Microelectronics

基　　金：北京市自然科学基金! (4982 0 0 4 );北京市科技新星计划基金 !(952 871 90 0 );电子元器件可靠性国家实验室资助课题 !(990 30 4 0 1 )

摘　　要：考虑了重掺杂引起的禁带变窄效应,建立起少数载流子室温和低温模型,并进行了定量的计算。研究发现,p-Si1-xGex中的少子浓度(电子)随x的增加而增加。在重掺杂条件下,常温时,少子浓度随杂质浓度的上升而下降;而低温时,少子浓度却随杂质浓度的上升而上升。Taking band gap narrowing effect resulting from heavy doping into consideration,calculative models for minority carrier(electron) concentration in p Si 1-x Ge x layers at room and low temperatures are presented It has been shown that the minority carrier increases with the Ge fraction in p Si 1-x Ge x layers Furthermore,it has been found that,for heavily doped SiGe layers,as the doping concentration increase,the minority carrier concentration decreases at room temperature,but increases at low temperatures

关 键 词：半导体材料 SIGE合金 低温特性 掺杂 

分 类 号：TN304.2[电子电信—物理电子学] TN305.3