标准CMOS工艺光电二级管及光标签的研制  

Research of Photodiodes and Optical Tags in Standard CMOS Process

作　　者：魏琪[1] 张春[1] 

机构地区：[1]清华大学微电子研究所,北京100084

出　　处：《半导体技术》2011年第2期104-107,共4页Semiconductor Technology

基　　金：国家高技术研究发展计划(2006AA04A109)

摘　　要：提出了一种作为无源射频(RFID)识别标签电源的光电二极管。此方案采用光电转换获取能量的方式替代传统电磁辐射获得能量的方式,克服了传统方案中RFID读写器辐射强且RFID Tag抗干扰能力差的缺点。光电二极管采用标准UMC 0.18μm CMOS工艺制作在RFID Tag上。研究了光电二极管的光伏及伏安特性,并给出了实验结果;使用低压测试电路对制作完毕的PD进行了功率输出性能实验,实验结果证明PD满足设计指标和后续电路的使用要求;对实验数据进行系统建模和参数估计,建立了可以应用于Cadence仿真环境的光电二极管模型;最后,利用仿真模型进行光标签的设计,流片测试结果证明了光标签的可行性。A photo diode（PD）as the power supply of passive RFID tags was presented.The energy was obtained by employing the way of the photoelectric conversion instead of the traditional way to obtain the energy from electromagnetic radiation.This technology was used to overcome the strong radiation intensity of the RFID reader and the shortcomings of poor anti-interference ability of the RFID tag.The PD integrated into the RFID tag was fabricated by UMC 0.18 μm CMOS standard process.The photovoltaic and volt-ampere characteristics of the PD were studied and the test results were given.The low-voltage circuit for the energy experiment proves that the PD can provide an enough drive power for the following circuit.According to the test data analysis and parameter extraction,a simulation model of the photodiode in Cadence simulation environment was proposed.Finally,based on the Cadence simulation model,the optical tag was designed,and the feasibility was proved.

关 键 词：射频识别 互补型金属氧化物半导体 光电二极管 仿真模型 光标签 

分 类 号：TN364.2[电子电信—物理电子学]