掺V6H-SiC单晶生长表面V析出相研究  

Study of V-Grains on the As-Grown Surface of V-Doped 6H-SiC

作　　者：洪颖[1] 郝建民[1] 冯玢[1] 王香泉[1] 章安辉[1] 

机构地区：[1]中国电子科技集团公司第四十六研究所,天津300220

出　　处：《半导体技术》2011年第2期124-126,143,共4页Semiconductor Technology

摘　　要：采用扫描电镜(SEM)和光学显微镜(OM)观察物理气相传输(PVT)法生长掺V6H-SiC单晶新鲜表面时,发现具有特定形状的析出相,经SEM能谱(EDX)测试确定析出相的主要成分是V,推断其在单晶生长结束后的降温过程中产生。通过对V析出相的进一步研究发现其在数量、尺寸以及方向上都与单晶生长中心具有一定的关系,具有特定的分布规律,任何一个视场,析出相的取向只有两种,且数量相当,这一结果说明结晶动力学对V的掺入具有一定的影响;当结晶温度较高时,这种影响不明显,但随着结晶区温度的降低,影响加剧,从而出现析出相,且析出相的结晶行为完全受晶体表面形貌的制约。Some tiny grains with the special shape were observed on the as-grown surface of V-doped 6H-SiC grown by SEM and OM.The V is a main element of the grains by using EDX and should appear during cooling process of the crystal.The grains have the special distribution rule with the step-flow model of the growth in the quantity,the size and the direction.In any testing areas,all the grains exist in two directions and mainly have the same amount in each direction.The results show that the crystallization kinetic factors have influences on the V doping greatly.When the crystallization temperature is higher,the influence is not obvious,but it will strengthen along with temperature decreasing and the grains will appear.The crystallization behavior is completely controlled by the surface morphology of crystal.

关 键 词：6H-SIC 掺钒 单晶生长表面 钒析出相 分布规律 

分 类 号：TN304.24[电子电信—物理电子学]