ZnO的点缺陷结构与p型化转变的研究进展  

The Research Development of the Point Defect Structure and p-Type Transition of ZnO

作　　者：成鹏飞[1] 张英堂[1] 余花娃[1] 

机构地区：[1]西安工程大学理学院,西安710048

出　　处：《材料导报》2011年第1期22-25,共4页Materials Reports

基　　金：陕西省教育厅专项科研计划项目(2010JK573);西安工程大学博士科研启动经费(BS0814)

摘　　要：ZnO是一种典型的直带隙宽禁带半导体材料,是下一代光电材料的代表。但由于p型化转变困难,使ZnO在光电领域的应用受到了极大限制。系统分析了ZnO的本征点缺陷结构和p型化转变方面的理论和实验研究成果,认为ZnO的n型电导应起源于本征点缺陷Zni或VO。通过Ⅴ族元素实现p型化转变的关键在于其稳定性,因此通过亚稳的点缺陷之间的相互作用实现相对较稳定的p-ZnO是Ⅴ族元素掺杂实现p型化转变的研究方向。考虑到Ⅰ族元素在ZnO中的固溶度较高且受主能级较浅,通过Ⅰ族元素的掺杂实现高电导p-ZnO也是实现p型化转变的思路;但是Ⅰ族元素的掺杂会引起严重的自补偿,因此实现Ⅰ族元素在ZnO晶格中的定位是Ⅰ族元素掺杂实现p型化转变的研究方向。ZnO is an important semiconductor material for next generation optoelectronic devices for the direct energy-gap of 3. 37eV. But the transition of p-type ZnO is still the bottleneck of the application of ZnO in optoeleetronic devices. The results in theory and experiment about intrinsic point defect structure and the transition of p-type ZnO are reviewed and analyzed. It is pointed out that n-type conductivity comes from intrinsic point defect of zinc interstitials or oxygen vacancies. The pivotal bottleneck for p-ZnO by group-V elements lies in the stability. Therefore, the realization of relative stable p-type ZnO through the reaction between different metastable point defects may be a research direction. Regarding the high solubility and lower acceptor levels of group- Ⅰ elements in ZnO, high conductive p-ZnO may be obtained by doping group- Ⅰ elements. For the existence of severe self-compensation, the realization of orientation of group- Ⅰ elements in ZnO lattice is another research direction.

关 键 词：ZNO薄膜 p型化 点缺陷 

分 类 号：TN304[电子电信—物理电子学]