脉冲激光沉积制备c轴取向AlN薄膜  

c axis Oriented AlN Thin Films Prepare d by Pulsed Excimer Laser Deposition

作　　者：黄继颇[1] 王连卫[1] 祝向荣[1] 多新中[1] 林成鲁[1] 

机构地区：[1]中国科学院上海冶金所

出　　处：《压电与声光》1999年第5期387-389,419,共4页Piezoelectrics & Acoustooptics

基　　金：上海市启明星计划

摘　　要：ｃ轴取向的ＡｌＮ 具有优异的压电性和声表面波传输特性，已受到人们日益广泛的重视。文章报道了采用ＫｒＦ脉冲准分子激光沉积工艺，在Ｓｉ（１００）衬底上成功地制备了ｃ轴取向的ＡｌＮ晶态薄膜。Ｘ射线衍射与傅里叶变换红外光谱的结果表明，在３００ °Ｃ～８００ °Ｃ衬底温度下，薄膜均只有（００２）一个衍射峰，但随着温度的升高，薄膜的结晶质量变好；原子力显微镜对８００ °Ｃ沉积薄膜观察结果显示，薄膜具有高度一致的柱状结构，平均晶粒大小为２５０ ｎｍ 。A1N thin films have bee n successfully grown on Si(100) substrat es by krF pulsed excimer laser depostion . XRD, FTIR and AFM are employed to char acterize A1N films. The substractes temp erature plays an important role in fabri cating A1N films. The films deposited at 300 °C ～800 °C are (002) oriented and s how better crystalline properties at hig her temperatures. AFM observations of th e films deposited at 800 °C reveal fine grains with size of 250 nm, implying the columnar growth mechnism.

关 键 词：氮化铝 脉冲激光沉积 压电性 半导体薄膜技术 

分 类 号：TN304.055[电子电信—物理电子学] TN304.23