Pr系ZnO压敏陶瓷的sol-gel法制备及电性能研究  

Preparation of Pr-doped ZnO varistor ceramics by sol-gel method and its electric properties

作　　者：李刚[1] 王茂华[1] 吴斌[1] 

机构地区：[1]常州大学化学化工学院,江苏常州213164

出　　处：《电子元件与材料》2011年第2期15-17,28,共4页Electronic Components And Materials

基　　金：江苏省自然科学基金资助项目(No.BK2009539)

摘　　要：以Zn(NO3)2和NaOH为原料,采用sol-gel法制备了Pr系ZnO压敏陶瓷。研究了所制压敏粉体和压敏陶瓷的性能。结果表明:干凝胶在700℃下煅烧2h,得到球状Pr系ZnO粉体颗粒,平均粒径为200nm。1220℃烧结制备的Pr系ZnO压敏陶瓷性能优异:晶粒大小约为3.2μm,压敏电压为910V/mm,非线性系数为40.2,漏电流为0.3μA,比传统固相合成工艺的烧结温度降低了约80℃。Pr-doped ZnO varistor ceramics were prepared using Zn （NO3）2 and NaOH as the raw material by sol-gel method.The properties of powders and varistor ceramics were investigated.The results show that Pr-doped ZnO powders calcined at 700 ℃ for 2 h are spherical with an average particle size of 200 nm.The properties of the Pr-doped ZnO varistor ceramics sintered at 1 220 ℃ are excellent：the average particle size of the powders is 3.2 μm,the varistor voltage （E1mA） is 910 V/mm,the nonlinear cofficient is 40.2 and the leakage current is 0.3 μA.The sintering temperature of Pr-doped ZnO varistor ceramics is about 80 ℃ lower than that of ZnO ceramics prepared by conventional solid-state synthesis technics.

关 键 词：SOL-GEL法 Pr系ZnO压敏陶瓷 非线性 微观结构 

分 类 号：TB33[一般工业技术—材料科学与工程]