对向靶溅射制备CN膜的键态  

BINDING STATE IN THE CN FILM SYNTHESIZED BY FACING TARGETS SPUTTERING

作　　者：王怡[1] 姜恩永[1] 白海力[1] 吴萍[1] 

机构地区：[1]天津大学

出　　处：《材料研究学报》1999年第5期549-551,共3页Chinese Journal of Materials Research

摘　　要：使用对向靶溅射系统制备ＣＮ 膜． 研究了膜的结构和Ｃ与Ｎ 之间的键态．膜为非晶结构，Ｎ／Ｃ随Ｎ２ 分压增大而增大，Ｎ 与Ｃ的键合优先形成Ｎｓｐ２Ｃ，Ｎｓｐ３Ｃ的含量随Ｎ／Ｃ上升而增大．Ｎ 含量进一步增大时， 出现新的键态，Ｎｓｐ３Ｃ含量下降．CN films were made by facing targets sputtering(FTS) system. XRD, XPS and FTIR were measured to investigate the structure and the binding state of the film. The films are amorphous and the N/C increases with the N 2 partial pressure increasing and reaches 0.46 when the N 2 presure is 100%. The N incorporated C forms N sp 2 C preferentially and then N sp 3 C ratio increases with the N/C increasing. However, the N sp 3 C ratio reduces when N/C reaches 0.46 due to arising of a new bind state.

关 键 词：对向靶溅射 CN膜 键态 

分 类 号：O484[理学—固体物理] O484[理学—物理]