硅基稀土热扩散法初探  

Investigation of Rare Earth Thermal Diffusion on Si Substrate

作　　者：陈炳若[1] 胡培植[2] 季韦平 

机构地区：[1]武汉大学物理学系,武汉430072 [2]武汉大学化学系,武汉430072

出　　处：《武汉大学学报（自然科学版）》1999年第5期617-618,共2页Journal of Wuhan University(Natural Science Edition)

摘　　要：The rare earth element Gd is doped into N Si substrate using thermal diffusion process. The rectifying contact with junction function is formed and reverse breakdown voltage is higher partly than 160v. The photocurrent can be observed in part of PN junction .The rare earth element Gd is doped into N Si substrate using thermal diffusion process. The rectifying contact with junction function is formed and reverse breakdown voltage is higher partly than 160v. The photocurrent can be observed in part of PN junction .

关 键 词：稀土元素 掺杂 热扩散 整流接触 硅基 

分 类 号：TN305.4[电子电信—物理电子学]