快速汽相沉积法制备硅薄膜太阳电池  

SILICON THIN FILM SOLAR CELL FABRICATED BY RTCVD

作　　者：王文静[1] 许颖[1] 罗欣莲 于民[1] 于元[1] 赵玉文[1] 

机构地区：[1]北京市太阳能研究所,北京100083

出　　处：《太阳能学报》1999年第4期404-407,共4页Acta Energiae Solaris Sinica

摘　　要：对在重掺杂抛光单晶硅衬底上用ＲＴＣＶＤ法形成硅薄膜太阳电池进行了研究。衬底为〈１００〉晶向ｐ＋ ＋ 型重掺硅片，电阻率为５×１０－ ３Ωｃｍ 。主要工艺过程为：在衬底上生长一层硅薄膜同时掺硼，膜厚３８μｍ ，扩磷制备ｐ－ｎ 结，背面蒸Ａｌ及Ｔｉ／Ｐｄ／Ａｇ 制背电极，正表面在扩散后生长一层ＳｉＯ２ ，前面用光刻剥离法制备Ｔｉ／Ｐｄ／Ａｇ 电极，制成的１ｃｍ ２ 太阳电池，开路电压ＶＯＣ＝ ６１２．８ｍ Ｖ，短路电流ＩＳＣ＝ ２９．３ｍ Ａ，填充因子ＦＦ＝ ０．７５７９，效率η＝ １３．６１。对一些影响电池特性的因素进行了研究，发现硅薄膜的掺杂浓度、发射层的掺杂浓度以及减反射层都对太阳电池的特性有较大影响。Results of silicon thin film solar cell fabricated by RTCVD are reported.The substrate is 〈100〉oriented p ++ type single crystalline silicon wafers whose resistivity is about 5×10 -3 Ωcm The crystalline silicon thin film was fabricated by RTCVD on polished p ++ type single crystalline silicon wafer.The thickness of the silicon film is about 38μm.Boron was introduced into the film during deposition.The p n junction was formed by phosphorous diffusion.The back Al/Ti/Pd/Ag electrode was deposited by vacuum evaporation.About 105nm SiO 2 film was grown on the front surface of cell as antireflection coating.The front Ti/Pd/Ag contact electrode was made by vacuum evaporation and photolithography process.The best conversion efficiency of the solar cell was 13.61% with V OC =612.8mV,I SC =29.3mA,and FF=0.7579.The area is 1cm 2.Some properties of this cell were discussed.We fond that many properties such as boron concentration in the film,phosphorous concentration in emitter layer and antireflection coating have significant influence on the solar cell characterization.

关 键 词：硅薄膜太阳电池 单晶硅 汽相沉积法 太阳电池 

分 类 号：TM914.42[电气工程—电力电子与电力传动]