一种能改善GaAsHBT自热效应的复合管  

Composite Transistors for Improving GaAs HBT′s Self-heating Effect

作　　者：朱向伟[1] 胡善文[2] 梁聪[2] 张晓东[3,4] 高怀[2] 

机构地区：[1]东南大学苏州研究院高频高功率器件与集成技术研究中心,江苏苏州215123 [2]东南大学国家ASIC系统工程技术研究中心,江苏南京210096 [3]苏州工业园区教育投资发展有限公司 [4]苏州英诺迅科技有限公司射频功率器件及电路技术中心,江苏苏州215123

出　　处：《现代电子技术》2011年第2期145-147,150,共4页Modern Electronics Technique

摘　　要：根据负反馈原理,提出一种复合管结构来补偿异质结双极型晶体管(HBT)的自热效应。仿真和测试曲线结果表明,在较宽环境温度和较大输出电流密度范围内,复合管的自热效应得到了有效抑制,静态工作点稳定,采用此复合管设计的功率放大器的1 dB提高了2 dB,线性得到了改善。A composite transistor design is proposed to compensate GaInP/GaAs heterojunction bipolar transistor＇s （HBT＇s） self-heating problem based on negative feedback technique. The proposed design produced some matching results in simulation and measurement. In the broad ambient temperature and output current density range, the self-heating effect of composite transistor was restrained, a more stable DC biasing point was achieved. The uses of such composite transistor can significantly improve the design of power amplifiers and its linearity is an important specification.

关 键 词：HBT 直流偏置 自热效应 线性度 

分 类 号：TN722.75[电子电信—电路与系统]