漏致势垒降低效应对短沟道应变硅金属氧化物半导体场效应管阈值电压的影响  

Drain-induced barrier-lowering effects on threshold voltage in short-channel strained Si metal-oxide semiconductor field transistor

作　　者：王晓艳[1,2] 张鹤鸣[1] 王冠宇[1] 宋建军[1] 秦珊珊[1] 屈江涛[1] 

机构地区：[1]西安电子科技大学微电子学院,宽禁带半导体材料与器件重点实验室,西安710071 [2]宝鸡文理学院电子电气工程系,宝鸡721007

出　　处：《物理学报》2011年第2期558-564,共7页Acta Physica Sinica

摘　　要：结合应变硅金属氧化物半导体场效应管(MOSFET)结构,通过求解二维泊松方程,得到了应变Si沟道的电势分布,并据此建立了短沟道应变硅NMOSFET的阈值电压模型.依据计算结果,详细分析了弛豫Si1-βGeβ中锗组分β、沟道长度、漏电压、衬底掺杂浓度以及沟道掺杂浓度对阈值电压的影响,从而得到漏致势垒降低效应对小尺寸应变硅器件阈值电压的影响,对应变硅器件以及电路的设计具有重要的参考价值.Based on strained silicon metal-oxide semiconductor field transistor （MOSFET） structure,the distribution of surface potential is obtained by solving two-dimensional Poisson equation,and the threshold voltage model is built. According to calculation results,the dependence of threshold voltage on germanium content of relaxed Si1-β Geβ,channel length, voltage of drain,doping content of substrate and channel are studied in detail,and the influence of drain-induced barrier-lowering on scaled strained silicon MOSFET is obtained,which can provide important reference for the design of strained silicon MOSFET device and circuit.

关 键 词：应变硅金属氧化物半导体场效应管 漏致势垒降低 二维泊松方程 阈值电压模型 

分 类 号：TN386[电子电信—物理电子学]