硅薄膜的恒电位诱导组装法制备及光学性能  

Constant potential induced self-assembly of silica films and their optical properties

作　　者：董征[1] 刘青[1] 苏革[1] 柳伟[1] 曹立新[1] 王景[1] 贾波[1] 赵莉丽[1] 宋美芹[1] 刘晓云[1] 

机构地区：[1]中国海洋大学材料科学与工程研究院,山东青岛266100

出　　处：《功能材料》2011年第B02期30-33,共4页Journal of Functional Materials

基　　金：教育部留学回国人员启动基金资助项目(教外司留〔2007〕1108号);国家大学生创新计划资助项目(091042355;2009-2010)

摘　　要：采用恒电位诱导组装法,在40℃、2.5V恒电位条件下,在FTO导电玻璃上制备硅薄膜,并分别通过循环伏安曲线(CV)、红外光谱仪、扫描电子显微镜(SEM)、紫外-可见分光光度计和荧光光谱仪对硅薄膜的生长条件、结构、形貌和光学性能进行了系统研究。结果表明,只有当溶液中用于模板剂的十六烷基三甲基溴化铵(CTAB)的浓度高于其临界胶束浓度并且在一定的正硅酸四乙酯(TEOS)浓度时,才可以得到岛粒状的硅薄膜。由荧光光谱可知,组装成的硅薄膜经过焙烧,可生成氧缺位的SiOx薄膜,其中x≤2。由于氧缺位,在3.8eV光的激发下有2.5eV的光致发光。Silica films were prepared on the surface of FTO conductive glass by constant potential induced self-assembly technique at 40℃, 2. 5V . Growth condition, structure, morphology and optical properties of the films were respectively demonstrated, by cyclic voltammograms （CV）, infrared spectrometer, scanning electron microscope （SEM）, UV-Vis spectrophotometer and fluorescence spectroscopy. Results show that silica films can be formed only if the concentration of CTAB solution is equal or greater than its critical micelle concentration or the concentration of TEOS reaches a definite extent. By fluorescence spectra, it was concluded that SiO. film was formed after calcination. Due to the formation of oxygen vacancy, the films emmited 2.5 eV light under the excitation of 3.8 eV incident light.

关 键 词：恒电位诱导组装法 硅薄膜 光学性能 SIOX 

分 类 号：TQ127.2[化学工程—无机化工]