酸腐蚀液对多晶硅表面织构的影响  

INFLUENCE OF ACIDIC SOLUTION ON THE TEXTURIZATION OF MULTI-SILICON

作　　者：邵俊刚[1] 廖华[1] 黄小龙[1] 陈义[1] 李雷[1] 李承晴[1] 

机构地区：[1]云南师范大学太阳能研究所,可再生能源材料先进技术与制备教育部重点实验室,云南省农村能源工程重点实验室,昆明650092

出　　处：《太阳能学报》2010年第12期1563-1567,共5页Acta Energiae Solaris Sinica

基　　金：云南省科技厅资助项目(2006E0033M)

摘　　要：通过在富HF的HF-HNO_3溶液体系中加入新的添加剂NH_3·H_2O,对多晶硅片进行了腐蚀试验研究。在溶液配比为HF:HNO_3:NH_3·H_2O:H_2O=12:1:1:4(体积比),腐蚀时间为10min时得到的效果最好,多晶硅的织构表面沟槽的密度更高、分布更均匀;在波长300～1000nm的范围内平均反射率为5.13%。能够获得低反射率的多晶硅织构表面的主要原因为:加入的NH_3·H_2O以及系统中反应生成的NH_4NO_3分解时产生的N_2O气体和NO_2^-起到关键作用。The new additive-NH3 · H2O was added into the HF-HNO3 water solution with rich HF for etching the multi-silicon wafer. The average reflectance of 5.13 % was obtained in wavelength region of 300-1000nm on the texturization surface of multi-silicon wafer. The multi-silicon wafer was etched by chemical solution HF： HNO3 ： NH3·H2O ： H2O = 12：1 ： 1：4 （by volume） in 10min, and the superficial shapes of muhi-silican were observed by SEM. It is found that there are more etching channels and uniform distributing on the silicon surface. The results show that the new additive NH3·H2O and N2 O, NO2^- produced by chemically reaction play a key function.

关 键 词：酸腐蚀 多晶硅 表面形貌 反射率 

分 类 号：TM914.4[电气工程—电力电子与电力传动]