基于P-MOSFET的低压差稳压电源的研究  

Research on LDO Stable Voltage Power Supply Based on P-MOSFET

作　　者：杨超[1] 

机构地区：[1]南京电子技术研究所,江苏省南京市210039

出　　处：《信息化研究》2010年第12期62-64,共3页INFORMATIZATION RESEARCH

摘　　要：低压差稳压电源以低功耗、高效率、低噪声、低干扰、体积小、重量轻等显著特点,深受人们的青睐,本文首先介绍了基于P-MOSFET的低压差稳压电路的工作原理,并通过分析运放的增益曲线说明系统的稳定性。接下来介绍了一种低压差稳压电路的驱动芯片的工作原理以及设计方法。并通过实验验证了稳压电路,设计出来的电路简单可靠。LDO（Low DropOut） stable voltage power supply features low power consuming, high efficiency, low noise, low disturbance, small volume and light weight. In this paper, we first introduce the working principle of the P-MOSFET LDO stable voltage power supply, validate the circuit by experiment and illustrate the stability by the gain curve of the operation amplifer, then a new chip of LDO MOSFET driver and its design method are presented. The designed circuit is simple and stable.

关 键 词：P-MOSFET 低压差 噪声 

分 类 号：TN386[电子电信—物理电子学]