厚度对电子束蒸发制备IMO薄膜性能的影响  

Effect of Thickness on the Mo-doped In_2O_3(IMO)Thin Films Grown by Electron Beam Vapor Deposition

作　　者：韩东港[1,2,3,4] 陈新亮[2,3,4] 杨瑞霞[1] 赵颖[2,3,4] 

机构地区：[1]河北工业大学信息工程学院,天津300401 [2]南开大学光电子薄膜器件与技术研究所 [3]南开大学光电子薄膜器件与技术天津市重点实验室 [4]南开大学光电信息技术科学教育部重点实验室,天津300071

出　　处：《河北工业大学学报》2010年第6期1-3,共3页Journal of Hebei University of Technology

基　　金：国家"973"重点基础研究项目(2006CB2026022006CB202603);天津市应用基础及前沿技术研究计划(09JCYBJC06900)

摘　　要：通过电子束蒸发法制备In2O3:Mo(IMO)薄膜,详细研究了厚度对薄膜光电性能的影响.当薄膜厚度为=35 nm时,XRD谱与SEM图像均证明薄膜基本上处于非晶态(存在少许纳米晶粒),其光学特性优良而电学特性较差;随着薄膜厚度增加,薄膜的晶体结构变得较完善,晶粒增大,薄膜电学性能取得到了改善,在薄膜厚度=150 nm时获得最小电阻率～2.1×10-4 cm,而光学特性有所恶化.通过性能指数比较,d=110 nm厚度的IMO薄膜光电性能较好.Optical and electrical properties of molybdenum doped indiumoxide（In2O3：Mo-IMO）films prepared by electron beam deposition technique with different thickness were investigated in detail.XRD spectra and SEM image proved that the film was amorphous when the IMO film thickness was 35 nm,which has good optical properties but bad electrical ones.With the thickness increasing,both the crystal structure and the electrical properties became better,the minmum resistivity of 2.1×10-4 €%Rcm was obtained at the film thickness of 150 nm.However the optical properties depraved.The film prepared at thickness of 110 nm has higher quality.

关 键 词：电子束蒸发技术 In2O3:Mo(IMO)薄膜 薄膜厚度 高迁移率 晶体结构 

分 类 号：TN304[电子电信—物理电子学]