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机构地区:[1]大连理工大学工业装备结构分析国家重点实验室,辽宁大连116024
出 处:《大连理工大学学报》2010年第6期850-853,共4页Journal of Dalian University of Technology
基 金:"九七三"国家重点基础研究发展计划资助项目(2005CB321704)
摘 要:用Monte Carlo模型模拟了亚单层薄膜在四方形基底上的生长过程.研究了在薄膜生长初期岛的形貌与周围原子作用之间的关系,及扩散原子周围不同位置处原子的势能参数对薄膜生长的影响.计算结果表明,扩散过程中,吸附原子受最近邻位置处原子作用的势能变化影响较大,而受次近邻位置处原子作用的势能变化影响较小;降低扩散原子最近邻位置处的能量参数,相当于升高了基底的温度.The submonolayer thin film growth processes on square lattice substrate were simulated by using Monte Carlo model.The relationships between island morphology at the initial stage of thin film growth and the effects of neighbor atoms were investigated.The effects of energy parameters of neighbor atoms at different positions were also considered.The results show that the influence of the change of potential energy at the nearest neighbor locations is larger than that at the secondary near neighbor locations at the diffusion process.The film morphology by reducing the energy parameter of the nearest neighbor is similar to that by increasing the temperature of substrate.
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