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机构地区:[1]辽宁省微纳米技术及系统重点实验室,辽宁大连116024 [2]大连理工大学精密与特种加工教育部重点实验室,辽宁大连116024
出 处:《大连理工大学学报》2010年第6期907-911,共5页Journal of Dalian University of Technology
基 金:国家自然科学基金资助项目(50675025)
摘 要:利用超声时效技术减小聚合物SU-8光刻胶的内应力,讨论了其机理.以基片曲率法为基础,建立了轮廓法测量SU-8胶层内应力的计算模型.实验研究了超声时效技术在减小聚合物SU-8胶层内应力方面的作用.对比分析了超声时效实验前、后SU-8胶层的内应力值.实验结果显示,在超声时效10min时,聚合物SU-8胶内应力减小2MPa,消除率约为23.17%.这表明,在合适的实验参数下利用超声时效技术可以有效减小聚合物SU-8胶内应力.To relieve the internal stress in SU-8 photoresist by using ultrasonic stress relief technology,the theory of the stress relief is discussed.Based on the wafer curvature measurement,a profile method was used to calculate the internal stress in SU-8 layers.The effect of ultrasonic stress relief to SU-8 layers was studied by experiments.The experimental values of internal stress before and after the ultrasonic stress relief process were compared.The experimental results show that the internal stress in SU-8 layers can be reduced for 2MPa,and the relief rate is about 23.17% after 10 min of ultrasonic stress relief.It is proved that the internal stress in SU-8 layers can be effectively reduced when the proper parameters of ultrasonic stress relief are chosen.
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