PMOS剂量计的剂量率效应  

Dose rate effects of PMOS dosimeter

作　　者：范隆[1] 任迪远[1] 郭旗[1] 张国强[1] 严荣良[1] 陆妩[1] 

机构地区：[1]中国科学院新疆物理研究所,乌鲁木齐830011

出　　处：《核技术》1999年第8期508-512,共5页Nuclear Techniques

基　　金：中国科学院院长基金

摘　　要：在不同剂量率的60Coγ辐照下，研究了PMOS剂量计阈值电压的响应关系。借助快速I—V亚阈分析技术，获得了辐射感生界面态对剂量率效应的贡献。结果表明，辐照响应有较明显的剂量率效应；主要表现为响应的拟合关系式△VT＝KDn中幂n的变化，在低剂量率区间内，n值较大，对应于辐射响应高灵敏度范围；当剂量率增大时，n值减小，响应灵敏度下降。讨论了克服剂量率效应影响其应用的办法。Response of PMOS dosimeter to total dose has been studied under ionizingradiation with 60Co γ-rays. The results showed that there was an obviousdependence of △ VT on dose rate. By means of I- V subthreshold curve measurementthe contribution of irradiation induced interface state positive charge to the dose rateeffects was found and the relationship of total threshold voltage shift △ VT and dosewas KDn. The power n decreased with increasing dose rate.

关 键 词：PMOS 阈值响应 剂量率 剂量计 钴60 Γ辐照 

分 类 号：TL818.4[核科学技术—核技术及应用]