典型CMOS存储器电离辐照效应  

Ionizing Irradiation Effect on Typical CMOS Memory Devices

作　　者：徐导进 刘伟鑫 王晨 蔡楠 吾勤之 

机构地区：[1]上海航天技术基础研究所,上海201109

出　　处：《上海航天》2011年第1期65-68,共4页Aerospace Shanghai

摘　　要：对电离辐照环境中典型CMOS存储器的辐照效应进行了研究。分析了SRAM,EEPROM,FLASH ROM存储器在60Coγ射线辐照及辐照后不同退火过程中,CMOS存储器的集成度、辐照偏置、退火时间和温度与电离辐照效应的关系。结果发现:不加电(冷备份)状态的60Coγ射线辐照过程中,存储器的逻辑状态翻转出现较正常工作状态推迟1个量级以上;随着集成度的提高,SRAM,EEPROM存储器的辐照敏感度降低;试验器件经不同剂量的60Coγ射线辐照后在不同温度下退火,所有试验器件均出现了逻辑状态翻转。Ionizing irradiation effect of typical CMOS memory devices in ionizing irradiation environment was studied in this paper.The relationships among integration scale,radiation bias,annealing time and temperature of SRAM,EEPROM and FLASH ROM and irradiation effect under ^60Co γ-ray irradiation were analyzed.The results showed that the turnover of the logical state for the device was 1 order later than the normal state in the ^60Co γ-ray irradiation without power-on.The irradiation sensitivities of the SRAM and EEPROM were decreased while the integration was higher.The logical turnover was exited in all the experiment devices that were annealed under various temperatures after being irradiated under different dose of ^60Co γ-ray.

关 键 词：电离辐照效应 辐照偏置 退火效应 

分 类 号：V520.6[航空宇航科学与技术—人机与环境工程]