反应蒸发制备nmSi-SiO_x发光薄膜  

Growth of Photoluminescent Nanometer Si-SiO_x Films by Reactive Evaporation

作　　者：张仕国[1] 樊瑞新[1] 邓晓清 袁骏[1] 陈伟[2] 

机构地区：[1]浙江大学硅材料国家重点实验室,杭州310027 [2]中国科学院半导体研究所,北京100083

出　　处：《真空科学与技术》1999年第5期331-335,共5页Vacuum Science and Technology

基　　金：国家自然科学基金重大项目! (6 9890 2 30 );浙江省自然科学基金和国家教委博士点基金

摘　　要：报道了用真空反应蒸发制备nmSi/SiOx 薄膜 ,制备出含有不同纳米尺寸硅颗粒的薄膜 ,研究了不同条件下得到的nmSi SiOx 薄膜的结构和组分。实验发现以SiO为蒸发源制备的薄膜能够实现光致发光。初步分析nmSi SiOx 薄膜发光机制可能是由纳米硅量子效应引起的 ,界面效应和缺陷对薄膜PL可能没有贡献 。Si SiO x films made of nanometer sized crystal grains were successfully grown on n tyep 2 inch Si wafers,with reactive evaporation technique.Microstructures and chemical composition of the films were studied with X ray diffraction,X ray photoelectron spectroscopy and photoluminescence spectroscopy techniques.The results show that growth parameters may significantly affect the nanocrystal sizes and that when SiO is used as evaporation source,the Si SiO x films grown are photoluminescence.Our preliminary studies indicate that the photoluminescence may possibly originate from quantum effects of Si nanocrystals instead of defects and interfacial effects.

关 键 词：反应蒸发 发光 薄膜 纳米硅 氧化硅 

分 类 号：TN304.055[电子电信—物理电子学]