后栅型场发射显示器窜压现象的研究  

Voltage Interference of Under-Gate Filed Emission Display

作　　者：吴朝兴[1] 胡利勤[1] 苏艺菁[1] 李昱[1] 郭太良[1] 

机构地区：[1]福州大学物理与信息工程学院,福州350002

出　　处：《真空科学与技术学报》2011年第1期12-16,共5页Chinese Journal of Vacuum Science and Technology

基　　金：国家863计划重大专项(2008AA03A313);福建省科技重大专项专题(2004HZ01-2);福建省教育厅资助项目(NO.J09003);福建省自然科学基金资助项目(No.2009J05145)

摘　　要：提出后栅型场发射显示器（FED）测试过程中的窜压现象,解释该现象的产生原因。阴极电极侧壁场发射电子轰击栅极导致电压表示数发生变化。针对此问题设计一种具有沟槽状介质层结构的后栅型FED从而避免阴极电极侧壁的电子发射。采用全印刷技术制作场发射显示阵列。实验表明此器件具有良好的发射稳定性及栅压调控特性,有效杜绝窜压现象的发生。阳极电压为600 V,栅极电压在100~250 V范围内对阳极电流有良好的调控作用。Here,we address the technical problems and possible solutions of the voltage interference and charge accumulation in the under-gate field emission display（FED）,fabricated with single-wall carbon nano-tube film emitters.The electron emission from the cathode sides was found to result in electron bombardment of the gate and a charge accumulation on its surface.A novel type of under-gate FED with a groove insulating layer（GIL） was designed to effectively eliminate the possibility of the side electron emission,and to enhance emission current.The emission characteristics of the prototyped under-gate FED with GIL structures fabricated in screen-printing technique,were evaluated.The results show that the voltage interference and charge accumulation were completely removed,and that the newly-developed FED shows good emission stability and gate modulation at a gate voltage ranging from 100 V to 250 V and an anode voltage of 600 V.

关 键 词：窜压现象 沟槽状介质层 二次电子发射 后栅型结构 场致发射 

分 类 号：TN383.1[电子电信—物理电子学]