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作 者:刘成[1] 安其[2] 周丽华[1] 钱子勍[1] 叶晓军[1] 陈鸣波[1]
机构地区:[1]上海空间电源研究所,上海200233 [2]北京北仪创新真空技术有限责任公司,北京102600
出 处:《真空科学与技术学报》2011年第1期124-127,共4页Chinese Journal of Vacuum Science and Technology
基 金:上海市博士后科研资助计划项目(08R21420200);上海市引进技术的吸收与创新计划项目(07X12-016)
摘 要:通过改变硅烷浓度,采用等离子体增强化学气相沉积方法制备了在有无金属屏蔽罩两种情况下的系列微晶硅太阳电池,发现将金属屏蔽罩去除后,本征微晶硅材料的沉积速率提高约一倍,微晶相至非晶相的硅烷浓度转变点有所变化。将沉积条件应用于不锈钢柔性衬底的非晶硅/微晶硅叠层太阳电池,获得了9.28%(AM0,1353 W/m2)和11.26%(AM1.5,1000W/m2)的光电转换效率。The hydrogen terminated,microcrystalline silicon(μc-Si:H) films,used to fabricate solar cells,were grown by plasma enhanced chemical vapor depositionon flexible substrates.The impacts of the deposition conditions,including contents of silane,the metallic shield,and deposition rate,on microstructures and optical properties of the films were studied.The results show that the metallic shield installed in the film growth setup strongly affects the silicon deposition rate.For instance,removal of the shield doubled the Si deposition rate.The content of silane also influenced the phase transition from microcrystalline phase to amorphous phase.The conversion efficiencies of the tandem solar cells,made with a-Si:H/μc-Si:H films deposited under optimized condition without the metallic shields on flexible,stainless steel substrates,were found to be 9.28%(AM0,1353 W/m2) and 11.26 %(AM1.5,1000 W/m2),respectively.
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