Zn在N-GaSb晶片中扩散机理的实验  

EXPERIMENTAL INVESTIGATION ON THE MECHANISM OF ZINC DIFFUSION IN TELLURIUM DOPED GALLIUM ANTIMONIDE

作　　者：郑青贺[1] 叶宏[1] 汤亮亮[1] 

机构地区：[1]中国科学技术大学热科学和能源工程系,合肥230027

出　　处：《太阳能学报》2011年第1期35-40,共6页Acta Energiae Solaris Sinica

基　　金：国家重点基础研究发展(973)计划(2007AA05Z236);安徽省人才开发资金(2007Z011)

摘　　要：对Zn在N-GaSb晶片中的扩散过程进行了实验研究和分析。实验中采用"准密封"扩散方法,使用纯Zn和纯Sb作为扩散源,通过SIMS(二次离子质谱仪)测量,得出了不同扩散时间和扩散温度下的Zn扩散曲线。经分析,发现扩散源用量对SIMS测量和实验结果有很大影响,在此基础上得出了较为理想的Zn扩散曲线所对应的工况。计算了不同Zn扩散曲线对应的内量子效率,计算结果表明,扩散实验得到的晶片经精确刻蚀后的内量子效率接近70%。Experimental investigation on Zn diffusion in N-GaSb was carried out. The experiments were performed using pure Zn and Sb as diffusion sources through pseudo-closed-box technique, and the Zn diffusion profiles at different diffusion times and temperatures were measured by SIMS （Secondary Ion Mass Spectrometry）. After analysis, it was found that amount of Zn pellets have great influence on SIMS measurement and Zn diffusion profiles. After that, the experiment conditions for relatively ideal Zn diffusion profile were pointed out. The corresponding internal quantum efficiency for different Zn diffusion profiles were calculated, and it showed that the internal quantum efficiency of the sample after precise chemical etching is nearly 70%

关 键 词：GASB Zn扩散曲线 SIMS 内量子效率 

分 类 号：TK511[动力工程及工程热物理—热能工程]