退火气氛对Al-F共掺杂ZnO薄膜结构和光电性能的影响  

EFFECT OF ANNEALING AMBIENCES ON STRUCTURAL,ELECTRICAL AND OPTICAL PROPERTIES OF Al-F CO-DOPED ZnO THIN FILMS

作　　者：马瑞新[1] 王海峰 王目孔[1] 康勃[1] 吴中亮[1] 

机构地区：[1]北京科技大学冶金与生态工程学院,北京100083 [2]驻航天科工集团三十五所军事代表室,北京100013

出　　处：《太阳能学报》2011年第1期49-53,共5页Acta Energiae Solaris Sinica

摘　　要：用射频磁控溅射法制备了Al-F共掺杂ZnO(ZnO(Al,F))透明导电薄膜,研究了不同退火气氛对ZnO(Al,F)薄膜的结构、电学和光学特性的影响。结果表明:在真空和还原性气氛中退火后的薄膜透光率呈现'蓝移'趋势,在空气中退火处理后的薄膜透光率则表现为'红移';在真空中,400℃×60min的退火处理,使ZnO(Al,F)薄膜的电阻率降低至1.41×10^(-3)Ω·cm,透光率则上升到93%以上,有效提高了薄膜的光电特性;所有退火气氛下,薄膜均具有(002)单一择优取向的多晶六方纤锌矿结构;薄膜的晶粒尺寸为25～30nm。ZnO： （Al, F） thin films have been prepared on glass substrates by RF magnetmn sputtering. The structural, electrical and optical properties of the deposited films were strongly influenced by different ambiences during the heat treatment. ＂Blue shift＂ of transmission of ZnO： （AI, F） films occured when they were annealed in vacuum and reductive atmosphere, respectively, while ＂red shift＂ was observed after annealing in the air. The lowest resistivity of the film is reduced to 1.41 × 10^-3 Ω· cm and the high optical transmittance is increased to 91.5% when it was annealed in vacuum with a temperature of 400℃ for 60min. All deposited films demonstrate a c-axis preferred orientation of （002） with grain size ranging from 25 to 30nm.

关 键 词：ZnO(Al F) 透明导电薄膜 退火 射频磁控溅射 

分 类 号：TN304.2[电子电信—物理电子学]