Thermodynamic analysis of growth of ternary Ⅲ-Ⅴ semiconductor materials by molecular-beam epitaxy  

Ⅲ-Ⅴ族三元化合物半导体材料分子束外延的生长热力学(英文)

作　　者：叶志成[1] 舒永春[1] 曹雪[1] 龚亮[1] 皮彪[1] 姚江宏[1] 邢晓东[1] 许京军[1] 

机构地区：[1]南开大学弱光非线性光子学教育部重点实验室,天津300457

出　　处：《Transactions of Nonferrous Metals Society of China》2011年第1期146-151,共6页中国有色金属学报（英文版）

基　　金：Projects(06YFJZJC01100,08JCYBJC14800)supported by Applied Basic Study Foundation of Tianjin,China;Project(2006AA03Z413)supported by the Hi-tech Research and Development Program of China

摘　　要：Thermodynamic models for molecular-beam epitaxy（MBE） growth of ternary Ⅲ-Ⅴ semiconductor materials are proposed.These models are in agreement with our experimental materials InGaP/GaAs and InGaAs/InP,and reported GaAsP/GaAs and InAsP/InP in thermodynamic growth.The lattice strain energy △G and thermal decomposition sensitive to growth temperature are demonstrated in the models simultaneously.△G is the function of the alloy composition,which is affected by flux ratio and growth temperature directly.The calculation results reveal that flux ratio and growth temperature mainly influence the growth process.Thermodynamic model of quaternary InGaAsP/GaAs semiconductor material is discussed also.建立Ⅲ-Ⅴ族三元化合物半导体材料的分子束外延生长热力学模型。该模型与实验材料InGaP/GaAs,InGaAs/InP及已发表的GaAsP/GaAs,InAsP/InP的数据吻合得很好。将晶格应变能△G及脱附对温度敏感这两个因素同时纳入热力学模型中,束流和生长温度直接影响合金组分,晶格应变能是合金组分的函数。热力学模型计算结果反映了束流和生长温度是生长过程中最主要的影响因素。讨论和分析了四元半导体材料InGaAsP/GaAs的热力学生长模型。

关 键 词：semiconductor materials Ⅲ-Ⅴ compounds GROWTH THERMODYNAMICS 

分 类 号：TN304.01[电子电信—物理电子学]