Forward gated-diode method for parameter extraction of MOSFETs  

作　　者：张辰飞 马晨月 郭昕婕 张秀芳 何进 王国增 杨张 刘志伟 

机构地区：[1]Peking University Shenzhen SOC Key Laboratory,PKU HKUST Shenzhen Institute [2]TSRC,Institute of Microelectronics,School of Electronic Engineering and Computer Science,Peking University [3]TSRCInstitute of Microelectronics,School of Electronic Engineering and Computer Science,Peking University [4]Key Laboratory of Integrated Microsystems,School of Computer & Information Engineering,Peking University Shenzhen Graduate School

出　　处：《Journal of Semiconductors》2011年第2期23-27,共5页半导体学报（英文版）

基　　金：Project supported by the Key Project of the National Natural Science Foundation of China(No.60936005);the Shenzhen Science & Technology Foundation,China(No.JSA200903160146A);the Industry,Education and Academy Cooperation Program of Guangdong Province,China(No.2009B090300318);the Fundamental Research Project of Shenzhen Science & Technology Foundation,China (No.JC200903160353A)

摘　　要：The forward gated-diode method is used to extract the dielectric oxide thickness and body doping concentration of MOSFETs, especially when both of the variables are unknown previously. First, the dielectric oxide thickness and the body doping concentration as a function of forward gated-diode peak recombination-generation （R-G） current are derived from the device physics. Then the peak R-G current characteristics of the MOSFETs with different dielectric oxide thicknesses and body doping concentrations are simulated with ISE-Dessis for parameter extraction. The results from the simulation data demonstrate excellent agreement with those extracted from the forward gated-diode method.The forward gated-diode method is used to extract the dielectric oxide thickness and body doping concentration of MOSFETs, especially when both of the variables are unknown previously. First, the dielectric oxide thickness and the body doping concentration as a function of forward gated-diode peak recombination-generation （R-G） current are derived from the device physics. Then the peak R-G current characteristics of the MOSFETs with different dielectric oxide thicknesses and body doping concentrations are simulated with ISE-Dessis for parameter extraction. The results from the simulation data demonstrate excellent agreement with those extracted from the forward gated-diode method.

关 键 词：forward gated-diode method recombination-generation current parameter extraction MOSFETS 

分 类 号：TN386.1[电子电信—物理电子学] TN31