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MOSFETS: 作品数：162被引量：120H指数：5; 导出分析报告; 相关领域：电子电信更多>>; 相关作者：罗军赵超钟汇才李俊峰何进更多>>; 相关机构：西安电子科技大学北京大学中国科学院微电子研究所清华大学更多>>; 相关期刊：更多>>; 相关基金：国家自然科学基金国家重点基础研究发展计划国家教育部博士点基金上海市自然科学基金更多>>

Short-circuit failure modes and mechanism investigation of 1200 V planar SiC MOSFETs: 《Journal of Semiconductors》2024年第12期136-143,共8页Yi Huang Qiurui Chen Rongyao Ma Kaifeng Tang Qi Wang Hongsheng Zhang Ji Ding Dandan Xu Sheng Gao Genquan Han; supported by the Science and Technology Innovation Key R&D Program of Chongqing (Grant No.2023TIADSTX0037);the National Natural Science Foundation of China (Grant No.62404026);the General Program of National Natural Science Foundation of Chongqing (Grant Nos.CSTB2023NSCQ-MSX0475,CSTB2024NSCQ-MSX0331);the Science and Technology Research Program of Chongqing Municipal Education Commission (Grant No.KJQN202400609).; This paper presents a comprehensive analysis of the short-circuit failure mechanisms in commercial 1.2 kV planar sili-con carbide(SiC)metal–oxide–semiconductor field-effect transistors(MOSFETs)under 400 and 800 V bu...; 关键词：SiC MOSFETs short-circuit failure mode mechanical stresses cracks hot spot

Sub-5 nm bilayer GaSe MOSFETs towards ultrahigh on-state current: 《Frontiers of physics》2024年第5期143-151,共9页Xueping Li Xiaojie Tang Zhuojun Wang Peize Yuan Lin Li Chenhai Shen Congxin Xia; supported by the National Natural Science Foundation of China(Grants Nos.12374070 and 12074103);the Foundation for University Key Young Teacher of Henan(Grant No.2023GGJS035);Henan Province Postdoctoral Project Launch Funding(Grant No.5201029430112);the Science and Technology Program of Henan(Grant No.232102230080);supported by the High Performance Computing Center of Henan Normal University.; Dielectric engineering plays a crucial role in the process of device miniaturization.Herein we investigate the electrical properties of bilayer GaSe metal-oxide-semiconductor field-effect transistors(MOSFETs),consider...; 关键词：GaSe stacking pattern metal-oxide-semiconductor field-effect transistors(MOSFETs) ultrahigh on-state current dielectric engineering

Compact modeling of quantum confinements in nanoscale gate-all-around MOSFETs: 《Fundamental Research》2024年第5期1306-1313,共8页Baokang Peng Yanxin Jiao Haotian Zhong Zhao Rong Zirui Wang Ying Xiao Waisum Wong Lining Zhang Runsheng Wang Ru Huang; supported in part by the Natural Science Foundation of China(62125401 and 62074006);the major scientific instruments and equipments development grant(61927901);the Shenzhen Fundamental Research Program(GXWD20200827114656001).; In this work,a surface-potential based compact model focusing on the quantum confinement effects of ultimately scaled gate-all-around(GAA)MOSFET is presented.Energy quantization with sub-band formation along the radiu...; 关键词：Gate-all-around FET Compact model Quantum mechanical confinement Nanosheet FET Nanowire FET Sub-band energy

Online Monitoring Method for Junction Temperature of SiC MOSFETs based on Temperature Sensitive Electrical Parameter: 《CSEE Journal of Power and Energy Systems》2024年第4期1799-1807,共9页Han Cao Puqi Ning Yunhao Huang Xuhui Wen; supported by the National Key R&D Program of China(2016YFB0100600);the Key Program of Bureau of Frontier Sciences and Education,Chinese Academy of Sciences(QYZDBSSW-JSC044)。; Compared to Si devices,the junction temperature of SiC devices is more critical due to the reliability concern introduced by immature packaging technology applied to new material.This paper proposes a practical SiC MO...; 关键词：Junction temperature Silicon Carbide(SiC)MOSFET TSEP

低压Si MOSFETs对SiC/Si级联器件短路特性的影响: 《电子科技大学学报》2024年第2期174-179,共6页周郁明楚金坤周伽慧; 安徽省自然科学基金(2008085ME157);安徽高校自然科学研究项目(KJ2020A0247)。; 由低压硅金属-氧化物-半导体场效应晶体管(Silicon Metal-Oxide-Semiconductor Field-Effect Transistor, Si MOSFET)和碳化硅结型场效应晶体管(Silicon Carbon Junction Field-Effect Transistor, SiC JFET)构成的SiC/Si级联(Cascode)...; 关键词：泄漏电流 SiC/Si级联器件 SiC JFET 短路失效

高压大功率SiC MOSFETs短路保护方法: 《高电压技术》2024年第4期1583-1595,共13页汪涛黄樟坚虞晓阳张茂强骆仁松李响; 南瑞集团有限公司科技项目(JS2101854)。; 碳化硅(SiC)MOSFETs短路承受能力弱,研究其短路保护方法成为保障电力电子设备安全运行的重要课题。现有方法大多围绕低压小功率SiC MOSFETs,然而随着电压和功率等级的提升,器件特性有所差异,直接套用以往设计难以实现高压大功率SiC MOSF...; 关键词：SiC MOSFETs 高压大功率短路保护器件特性漏源极电压栅极电荷

Physical insights into trapping effects on vertical GaN-on-Si trench MOSFETs from TCAD: 《Journal of Semiconductors》2024年第3期45-52,共8页NicolòZagni Manuel Fregolent Andrea Del Fiol Davide Favero Francesco Bergamin Giovanni Verzellesi Carlo De Santi Gaudenzio Meneghesso Enrico Zanoni Christian Huber Matteo Meneghini Paolo Pavan; funding from the Electronic Component Systems for European Leadership Joint Undertaking (ECSEL JU),under grant agreement No.101007229;support from the European Union’s Horizon 2020 Research and Innovation Programme,Germany,France,Belgium,Austria,Sweden,Spain,and Italy; Vertical GaN power MOSFET is a novel technology that offers great potential for power switching applications.Being still in an early development phase,vertical GaN devices are yet to be fully optimized and require car...; 关键词：vertical GaN trench MOSFET SiO_(2) interface traps border traps HYSTERESIS BTI

Ohmic-contact ballistic 2D In Se transistors:promising candidates for more Moore electronics: 《Science China(Information Sciences)》2024年第3期307-308,共2页Hong LI Qiuhui LI Jing LU; The scaling of silicon-based metal-oxide-semiconductor fieldeffect transistors(MOSFETs)approaches its physical limits at a gate length(LG)of 12 nm and supply voltage(VDD)of 0.6 V according to the International Roadmap...; 关键词：TRANSISTORS Ohmic MOSFETS

Influence of Parasitic Parameters on Dynamic Threshold Voltage Hysteresis of Silicon Carbide MOSFETs被引量：1: 《CSEE Journal of Power and Energy Systems》2023年第6期2251-2262,共12页Yumeng Cai Tong Sun Peng Sun Zhibin Zhao Xuebao Li Hui Wang Zhong Chen Boyuan Cao; the Science andTechnology Project of State Grid Corporation of China (No. 52094021N012).; Threshold voltage (V_(TH)) hysteresis affects the dynamic characteristics of silicon carbide (SiC) MOSFETs, whichin turn affects reliability of a device. In this paper, a dynamichysteresis curve is proposed as an eval...; 关键词：Dynamic hysteresis curve parasitic parameters silicon carbide(SiC)MOSFETs switching characteristics threshold voltage hysteresis

Low working loss Si/4H-SiC heterojunction MOSFET with analysis of the gate-controlled tunneling effect: 《Journal of Electronic Science and Technology》2023年第4期35-47,共13页Hang Chen You-Run Zhang; the Major Science and Technology Program of Anhui Province under Grant No.2020b05050007.; A silicon (Si)/silicon carbide (4H-SiC) heterojunction double-trench metal-oxide-semiconductor field effect transistor (MOSFET) (HDT-MOS) with the gate-controlled tunneling effect is proposed for the first time based ...; 关键词：HETEROJUNCTION On-state resistance Silicon carbide(4H-SiC)trench metal-oxide-semiconductor field effect transistors(MOSFETs) Switching loss

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