Ohmic-contact ballistic 2D In Se transistors:promising candidates for more Moore electronics  

作　　者：Hong LI Qiuhui LI Jing LU 

机构地区：[1]College of Mechanical and Material Engineering,North China University of Technology,Beijing 100144,China [2]State Key Laboratory for Mesoscopic Physics and Department of Physics,Beijing 100871,China [3]Collaborative Innovation Center of Quantum Matter,Beijing 100871,China [4]Beijing Key Laboratory for Magnetoelectric Materials and Devices,Beijing 100871,China [5]Peking University Yangtze Delta Institute of Optoelectronics,Beijing 226000,China [6]Key Laboratory for the Physics and Chemistry of Nanodevices,Peking University,Beijing 100871,China

出　　处：《Science China(Information Sciences)》2024年第3期307-308,共2页中国科学（信息科学）（英文版）

摘　　要：The scaling of silicon-based metal-oxide-semiconductor fieldeffect transistors(MOSFETs)approaches its physical limits at a gate length(LG)of 12 nm and supply voltage(VDD)of 0.6 V according to the International Roadmap for Devices and Systems(IRDS)blueprint.

关 键 词：TRANSISTORS Ohmic MOSFETS 

分 类 号：TN386[电子电信—物理电子学]