funding from the Electronic Component Systems for European Leadership Joint Undertaking (ECSEL JU),under grant agreement No.101007229;support from the European Union’s Horizon 2020 Research and Innovation Programme,Germany,France,Belgium,Austria,Sweden,Spain,and Italy
Vertical GaN power MOSFET is a novel technology that offers great potential for power switching applications.Being still in an early development phase,vertical GaN devices are yet to be fully optimized and require car...
L.T.W.F.acknowledges support from the Department of Energy National Nuclear Security Administration Stewardship Science Graduate Fellowship,which is provided under cooperative agreement number DE-NA0003960;SX and IJB gratefully acknowledge support from the Office of Naval Research under contract ONR BRC Grant N00014-21-1-2536;Use was made of computational facilities purchased with funds from the National Science Foundation(CNS-1725797);administered by the Center for Scientific Computing(CSC).The CSC is supported by the California NanoSystems Institute and the Materials Research Science and Engineering Center(MRSEC,NSF DMR 1720256)at UC Santa Barbara.H.Z.,X.G.L.,C.C.;S.P.O.acknowledge support from the Office of Naval Research under Grant number N00014-18-1-2392;computational resources provided by the University of California,San Diego,and the Extreme Science and Engineering Discovery Environment(XSEDE)supported by the National Science Foundation under grant no.ACI-1548562;LQ acknowledges support from the National Science Foundation(NSF)under award DMR-1847837 and computational resources provided by Extreme Science and Engineering Discovery Environment(XSEDE)Stampede2 at the TACC through allocation TG-DMR190035.
Refractory multi-principal element alloys(RMPEAs)are promising materials for high-temperature structural applications.Here,we investigate the role of short-range ordering(SRO)on dislocation glide in the MoNbTi and TaN...
supported by NSFC(61874005,61927901);the 111 Project(B18001).
In this article,the body bias dependence of the bias temperature instability(BTI)in bulk FinFETs is experimentally studied,under different test conditions for the first time.In contrast to the traditional understandin...