Body Bias Dependence of Bias Temperature Instability(BTI)in Bulk FinFET Technology  

作　　者：Jiayang Zhang Zirui Wang Runsheng Wang Zixuan Sun Ru Huang 

机构地区：[1]Institute of Microelectronics,Peking University,Beijing 100871,China

出　　处：《Energy & Environmental Materials》2022年第4期1200-1203,共4页能源与环境材料（英文）

基　　金：supported by NSFC(61874005,61927901);the 111 Project(B18001).

摘　　要：In this article,the body bias dependence of the bias temperature instability(BTI)in bulk FinFETs is experimentally studied,under different test conditions for the first time.In contrast to the traditional understanding that changing body bias has little impact on BTI degradation in FinFETs due to its weak body effect,it is observed that it actually has non-negligible impacts.And a forward body bias(FBB)can reduce the BTI degradation in FinFETs,which is opposite with the trend in planar devices.The underlying physics is found due to the trade-off between two competing factors.The results are helpful for understanding and modeling reliability in FinFETs.

关 键 词：bias temperature instability(BTI) body effect FINFET RELIABILITY 

分 类 号：TN386[电子电信—物理电子学]