SiC掺氯热氧化技术与SiC MOS电容偏压温度不稳定性  

SiC Chlorine-Doped Thermal Oxidation Technology and Bias Temperature Instability of SiC MOS Capacitors

作　　者：于洪权 尉升升 刘兆慧 尹志鹏 白娇 谢威威 王德君 Yu Hongquan;Wei Shengsheng;Liu Zhaohui;Yin Zhipeng;Bai Jiao;Xie Weiwei;Wang Dejun(School of Control Science and Engineering,Faculty of Electronic Information and Electrical Engineering,Dalian University of Technology,Dalian 116024,China)

机构地区：[1]大连理工大学电子信息与电气工程学部控制科学与工程学院,辽宁大连116024

出　　处：《半导体技术》2023年第5期380-388,共9页Semiconductor Technology

基　　金：国家自然科学基金资助项目(61874017)。

摘　　要：偏压温度不稳定性(BTI)是影响SiC MOS器件性能的关键因素。提出了一种制备SiC MOS电容的新工艺,即在SiC干氧氧化气氛中掺入氯化氢(HCl),并对比了不同HCl与O_(2)体积流量比对SiC MOS电容电学性能的影响。结果表明,该工艺有效地改善了SiC MOS电容的栅氧击穿特性,降低了界面态密度,提升了平带电压稳定性。二次离子质谱(SIMS)和X射线光电子能谱(XPS)测试分析表明,掺氯热氧化技术能够有效消除界面缺陷。进一步分析表明,SiC掺氯热氧化技术能够降低可动离子面密度和氧化层陷阱电荷密度,能够有效改善器件的BTI特性。Bias temperature instability(BTI)is a key factor affecting the performance of SiC MOS devices.A new process for the preparation of SiC MOS capacitors was proposed,that is,doping hydrogen chloride(HCl)into the dry oxygen oxidation atmosphere of SiC.The effects of different volume flow ratios of HCl and O_(2)on the electrical properties of SiC MOS capacitors were compared.The results show that the gate oxygen breakdown characteristic of SiC MOS capacitors is effectively improved,the density of interface states is reduced,and the stability of flat-band voltage is improved.Secondary ion mass spectrometry(SIMS)and X-ray photoelectron spectroscopy(XPS)tests show that the chlorine-doped thermal oxidation technology can effectively eliminate interface defects.Further analysis shows that SiC chlorine-doped thermal oxidation technology can reduce the surface density of mobile ions and the trap charge density of the oxide layer.Therefore,the BTI characteristic of the device can be effectively improved.

关 键 词：碳化硅 MOS电容 热氧化 偏压温度不稳定性(BTI) 阈值电压漂移 

分 类 号：TN386[电子电信—物理电子学]