Body-contact self-bias effect in partially depleted SOI-CMOS and alternatives to suppress floating body effect  

作　　者：周建华 高明辉 彭树根 邹世昌 

机构地区：[1]Grace Semiconductor Manufacturing Corporation [2]Shanghai Institute of Microsystem and Information Technology,Chinese Academy of Sciences [3]Graduate University of the Chinese Academy of Sciences

出　　处：《Journal of Semiconductors》2011年第2期33-37,共5页半导体学报（英文版）

摘　　要：As SOI-CMOS technology nodes reach the tens ofnanometer regime, body-contacts become more and more ineffective to suppress the floating body effect. In this paper, self-bias effect as the cause for this failure is analyzed and discussed in depth with respect to different structures and conditions. Other alternative approaches to suppressing the floating body effect are also introduced and discussed.As SOI-CMOS technology nodes reach the tens ofnanometer regime, body-contacts become more and more ineffective to suppress the floating body effect. In this paper, self-bias effect as the cause for this failure is analyzed and discussed in depth with respect to different structures and conditions. Other alternative approaches to suppressing the floating body effect are also introduced and discussed.

关 键 词：partially depleted SOI-CMOS floating body effect HOT-CARRIERS kink-effect gate oxide tunneling 

分 类 号：TN386.1[电子电信—物理电子学] TN432