HOT-CARRIERS

作品数：4被引量：10H指数：2
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相关期刊：《Journal of Semiconductors》《Chinese Physics Letters》《Journal of Energy Chemistry》更多>>
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In-depth understanding the effect of electron-withdrawing/-donating groups on the interfacial carrier dynamics in naphthalimide-treated perovskite solar cells
《Journal of Energy Chemistry》2023年第2期514-520,I0013,共8页Tai Wu Rongjun Zhao Donglin Jia Linqin Wang Xiaoliang Zhang Licheng Sun Yong Hua 
the National Natural Science Foundation of China(22065038);the Key Project of Natural Science Foundation of Yunnan(KC10110419);the High-Level Talents Introduction in Yunnan Province(C619300A010);the Fund for Excellent Young Scholars of Yunnan(K264202006820);the support from the Yunnan University Research Innovation Found for Graduate Students(2021Z095)。
Surface defect passivation of perovskite films through chemical interaction between specific functional groups and defects has been proven to be an effective technique for enhancing the performance and stability of pe...
关键词：Perovskite solar cell Defect Charge-carrier recombination HOT-CARRIERS 
Influence of Hot-Carriers on the On-State Resistance in Si and GaAs Photoconductive Semiconductor Switches Working at Long Pulse Width被引量：5
《Chinese Physics Letters》2020年第4期49-52,共4页Chong-Biao Luan Hong-Tao Li 
Supported by the Rector’s Fund of China Academy of Engineering Physics(Grant No.YZJJLX2016002);the National Natural Science Foundation of China(Grant Nos.61504127 and U1530128).
We demonstrate that the transport of hot carriers may result in the phenomenon where an oscillated output current appears at the waveforms in a high-power photoconductive semiconductor switch(PCSS) working at long pul...
关键词：SCATTERING CONDUCTIVE RESISTANCE 
Continuous analyticⅠ-Ⅴmodel for GS DG MOSFETs including hot-carrier degradation effects被引量：4
《Journal of Semiconductors》2012年第1期41-46,共6页Toufik Bentrcia Faycal Djeffal Abdel Hamid Benhaya 
We have studied the influence of hot-carrier degradation effects on the drain current of a gate-stack double-gate （GS DG） MOSFET device. Our analysis is carried out by using an accurate continuous current-voltage （...
关键词：GS DG MOSFET hot-carriers degradation effects compact modeling piece-wise models 
Body-contact self-bias effect in partially depleted SOI-CMOS and alternatives to suppress floating body effect被引量：1
《Journal of Semiconductors》2011年第2期33-37,共5页周建华 高明辉 彭树根 邹世昌 
As SOI-CMOS technology nodes reach the tens ofnanometer regime, body-contacts become more and more ineffective to suppress the floating body effect. In this paper, self-bias effect as the cause for this failure is ana...
关键词：partially depleted SOI-CMOS floating body effect HOT-CARRIERS kink-effect gate oxide tunneling 
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