N_2O气氛退火对SONOS非易失性存储器性能的优化研究  

Study of Optimizing the Charge Retention in SONOS Nonvolatile Memory Devices with N_2O Anneal

作　　者：周群[1] 林钢 李曦[1] 沈国飞 曹刚 石艳玲[1] 

机构地区：[1]华东师范大学信息科学与技术学院,上海200062 [2]上海华虹NEC电子有限公司,上海201206

出　　处：《电子器件》2011年第1期36-39,共4页Chinese Journal of Electron Devices

基　　金：国家科技重大专项课题资助(2009ZX02023-2-1)

摘　　要：SONOS(Silicon-Oxide-Nitride-Oxide-Silicon)型非易失性存储器件的电荷保持能力与Si-SiO2界面态的质量密切相关。通过在SONOS的隧穿氧化层工艺流程中增加适当的N2O退火工艺,改善了器件的擦除深度和编程速度,从而使得SONOS器件的存储器性能得到优化。通过进一步电荷泵测试表明,电荷泵电流值Icp由1.8×10-6A减小到1.3×10-6A,减小27.8%,即隧穿氧化层与衬底之间的界面态显著减少。因此,在SONOS工艺中增加适当的N2O退火工艺,能有效地优化存储器的存储能力,提高SONOS存储性能。The quality of the Si-SiO2 interface is associated with the long-term retention in polysilicon-oxide-nitride-oxide-silicon（SONOS）nonvolatile semiconductor memory（NVSM）devices [1].We improve the storage capability of SONOS nonvolatile semiconductor memory,including lower erase depth,faster program speed,by adding proper anneal process after tunnel oxide deposition.From further charge pump test,charge pump current（Icp）decreases from 1.8×10-6 A to 1.3×10-6 A,decreased by 27.8%.This phenomenon shows the interface states between tunnel oxide and substrate are decreased obviously.As a conclusion,the process of N2O anneal can optimize the storage capability of SONOS nonvolatile semiconductor memory effectively.

关 键 词：SONOS(硅/二氧化硅/氮化硅/二氧化硅/硅) 退火工艺 电荷保持性能 界面态 

分 类 号：TP333.5[自动化与计算机技术—计算机系统结构]