TMAH溶液中的(110)硅各向异性湿法腐蚀及其在不同添加剂下的腐蚀特性研究  

Anisotropic Wet Etching Behaviors and Characteristics of(110)-Oriented Silicon in TMAH Solution with Different Surfactants

作　　者：陈骄[1] 董培涛[1] 邸荻[1] 吴学忠[1] 

机构地区：[1]国防科技大学机电工程与自动化学院,长沙410073

出　　处：《传感技术学报》2011年第2期185-189,共5页Chinese Journal of Sensors and Actuators

基　　金：国家自然科学基金(91023028)

摘　　要：研究了TMAH溶液中(110)硅片在不同几何形状掩膜窗口下的各向异性湿法腐蚀行为,探讨了(110)硅在TMAH与不同添加剂(过硫酸铵、异丙醇等)构成的腐蚀系统下的腐蚀特性。利用场发射扫描电子显微镜(SEM)观测(110)硅的腐蚀坑腔结构,利用扫描探针显微镜(SPM)测量(110)硅腐蚀的表面粗糙度。结果表明:(110)硅片腐蚀的坑腔结构与掩膜窗口的大小和腐蚀时间有关;在充分腐蚀的情况下,(110)硅片腐蚀的坑腔结构是由四个与表面垂直的(111)面和另外两个与表面成35.26°夹角的(111)面围成的结构;过硫酸铵和异丙醇能显著改善腐蚀表面质量。This paper studies the anisotropic wet etching behaviors of（110）-oriented silicon wafers through small openings of different geometry etched in TMAH solution.The etching characteristics in TMAH solution with different surfactants（ammonium persulfate,IPA,etc.）are also discussed in detail.SEM is used to observe the structures of etched cavities and SPM is used to measure the roughness of the（110）surface.It is showed that the structures of the etched cavities are affected by the shape of the openings and the etching time.The etched cavity is composed of six（111）oriented planes,four of which are perpendicular sidewalls and the other two are inclined with 35.26° angle to the wafer surface,when the etching time is long enough.Ammonium persulfate and IPA can both improve the quality of the etched surface remarkably.

关 键 词：湿法各向异性腐蚀 (110)硅 TMAH 过硫酸铵 异丙醇 

分 类 号：TN304.5[电子电信—物理电子学] TN405