磁各向异性对(In,Ga)As衬底(Ga,Mn)As的影响(英文)  

Influence of magnetocrystalline anisotropy on magneto-optics in GaMnAs/InGaAs epilayer

作　　者：朱科[1] 郑厚植[1] 甘华东[1] 刘剑[1] 朱汇[1] 章昊[1] 李桂荣[1] 赵建华[1] 

机构地区：[1]中国科学院半导体研究所超晶格国家重点实验室,北京100083

出　　处：《红外与毫米波学报》2011年第1期1-5,共5页Journal of Infrared and Millimeter Waves

基　　金：National Basic Research Programs of China(2006CB932801);State Key Project of Fundamental Research of China(2007CB924903);The Special Research Programs of Chinese Academy of Sciences(2007CB924904);Special Research Programs of Chinese Academy of Sciences,the Knowledge Innovation Program Project of Chinese Academy of Sciences under the contract No.KJCX.YW.W09;National Natural Science Foundation of China under the contract No.60836002,10674130 and 60521001

摘　　要：在(In,Ga)As缓冲层中生长的Ga0.95Mn0.05As薄膜的磁光圆二向色性(MCD)扫描磁场的测量中发现异常现象,这一现象出现在外磁场把样品的磁化矢量扭转到与入射光方向一致或远离入射光方向之时.通过磁各向异性的平均场理论,我们认为这实际上是磁各向异性对带-带跃迁影响的表现,是由于空穴带劈裂和E-k色散关系均与磁化方向相关而引起的.Abnormal behaviors were observed in magnetic circular dichroism（MCD） in both as-grown and annealed Ga0.95Mn0.05As/InGaAs epilayer,as the direction of magnetization vector turns away from or toward the direction of incident beam by applying a magnetic field.Following the mean-field theory of magnetocrystalline anisotropy,it is found that the phenomena are actually the manifestation of the influence of the magnetic anisotropy on interband optical transitions due to the dependence of hole band splitting and warp of E-k dispersion relation on the magnetization orientation.

关 键 词：(Ga Mn)As 磁光效应 振荡 磁各向异性 

分 类 号：O472.5[理学—半导体物理] O482.55[理学—物理]