Nb/SnO_2复合薄膜的制备、结构及光电性能  

Preparation and structure and optical-electrical properties of the Nb/SnO_2 composite thin film

作　　者：曾乐贵[1,2] 刘发民[1] 钟文武[1] 丁芃[1] 蔡鲁刚[1] 周传仓[1] 

机构地区：[1]北京航空航天大学物理科学与核能工程学院物理系纳米测控与低维物理教育部重点实验室,北京100191 [2]装甲兵工程学院基础部,北京100072

出　　处：《物理学报》2011年第3期779-784,共6页Acta Physica Sinica

基　　金：航天科学基金(批准号:373858)资助的课题~~

摘　　要：用溶胶-凝胶旋涂法在玻璃基底上制备出Nb/SnO2复合透明导电薄膜,利用XRD,SEM,紫外—可见分光光度计,四探针电阻仪等测试方法对Nb/SnO2复合薄膜的结构和物性进行了研究.结果表明:当Nb含量小于0.99at%时,Nb/SnO2复合薄膜为较纯的四方金红石结构;复合薄膜中晶粒分布均匀,平均尺寸在5—7nm.当Nb含量小于0.99at%时,Nb/SnO2复合薄膜的电阻率先减小后增大,当Nb含量为0.37at%时,复合薄膜的电阻率降低到9.49×10-2Ω·cm.在400—700nm可见光范围内,当Nb含量小于0.99at%时,Nb/SnO2复合薄膜的透过率都在90%以上,其光学带隙在3.9—4.1eV之间;当Nb含量达到1.23at%时,可见光透过率明显降低.The Nb /SnO2 composite thin films were successfully synthesized by sol-gel spin-coating method on glass substrate. The structures and properties of Nb /SnO2 composite thin films were characterized by X-ray diffraction （ XRD）,scanning electron microscopey （SEM）,ultraviolet visible near-infrared spectrophotometry and four-probe method. The effects of Nb doping on structure and optical-electrical properties of the Nb /SnO2 composite thin films were researched. The results indicate that a tetragonal rutile structure is retained when the Nb content is less than 0. 99at% ,and the nano-particles are distributed homogeneously in the thin films and their size can be controlled in the range of 5—7 nm. The resistivity of Nb / SnO2 composite thin films decreases and then increases when the Nb content is less than 0. 99at% ,and reaches a very low value of 9. 49 × 10^-2 Ω·cm at 0. 37at% Nb. In the range of 400—700 nm visible region,the transmittance of Nb /SnO2 composite thin films is up to 90% when the Nb content is less than 0. 99at% ,and the optical band gap of Nb /SnO2 composite thin films are in the range of 3. 9—4. 1 eV. The visible light transmittance of Nb /SnO2 composite thin films significantly reduce at 1. 23at% Nb.

关 键 词：溶胶-凝胶法 Nb/SnO2复合薄膜 结构表征 光电性能 

分 类 号：O484[理学—固体物理]