钡铁氧体薄膜的c轴取向生长  

c-Axis Growth of Ba-Ferrite Thin Films

作　　者：刘小晰[1] 杨正[1] 松本光功[1] 

机构地区：[1]兰州大学磁性材料研究所,日本国信州大学工学部情报工学科

出　　处：《功能材料》1999年第4期358-360,共3页Journal of Functional Materials

摘　　要：首次使用非晶Ｂａ－Ｆｅ－Ｏ衬底层来控制钡铁氧体（ＢａＭ）薄膜的取向生长。这种非晶层决定了六角Ｍ相的结晶并改善了其晶化度。应用这种非晶衬底层，制备了ｃ轴垂直于膜表平面的ＢａＭ薄膜。其（００８）峰的摇摆曲线的半高宽Δθ５０仅为２．For the fist time,amorphous Ba-Fe-O underlayers were used to tailor the growth of BaM thin films.This kind of underlayers facilitated the crystallite of BaM phase.Using the underlayer,BaM thin film with c-axis orientation have been prepared.It is characterized by XRD that the full width of half maxim height of the rocking curve of (008) peak ( 50) is only 2.5.

关 键 词：钡铁氧体薄膜 C轴取向 非晶衬底层 生长 

分 类 号：TM277.051[一般工业技术—材料科学与工程]