不同偏置条件下基区掺杂浓度对NPN双极晶体管电离辐照的影响  

Radiation effect of doping and bias conditions on NPN bipolar junction transistors

作　　者：席善斌[1,2,3] 王志宽[4] 陆妩[1,2] 王义元[1,2,3] 许发月[1,2,3] 周东[1,2,3] 李明[1,2,3] 王飞[1,2,3] 杨永晖[4] 

机构地区：[1]中国科学院新疆理化技术研究所,乌鲁木齐830011 [2]新疆电子信息材料与器件重点实验室,乌鲁木齐830011 [3]中国科学院研究生院北京100049 [4]模拟集成电路国家重点实验室重庆400060

出　　处：《核技术》2011年第3期205-208,共4页Nuclear Techniques

基　　金：国家自然科学基金项目(No10975182)资助

摘　　要：对相同工艺制作但基区掺杂浓度不同的国产NPN双极晶体管,在不同偏置条件下进行60Co-γ辐照效应和退火特性研究。结果显示:基区掺杂浓度不同,NPN双极晶体管辐照响应也不相同,低基区掺杂浓度的晶体管辐照损伤要明显大于高基区掺杂浓度的晶体管辐照损伤;偏置条件不同,晶体管辐照响应也有很大差别,反向偏置辐照NPN晶体管参数退化较正向偏置严重。并对对实验现象的相关机理进行了分析。Abstract In this paper, we investigate ^6^0Co y-ray irradiation effects and annealing behaviors of NPN bipolar junction transistors of the same manufacturing technology but different doping concentrations. The transistors of different doping concentrations differ in responses of the radiation effect. More degradation was observed with the transistors of low concentration-doped NPN transistors than the high concentration-doped NPN transistors. The results also demonstrate that reverse-biased transistors are more sensitive to radiation than the forward-biased ones. Mechanisms of the radiation responses are analyzed.

关 键 词：NPN双极晶体管 ^6^0Co-y辐照 基区掺杂浓度 辐照偏置 

分 类 号：TN322.8[电子电信—物理电子学]