S波段连续波SiC功率MESFET  

S-Band CW SiC Power MESFETs

作　　者：陈昊[1] 潘宏菽[1] 杨霏[1] 霍玉柱[1] 商庆杰[1] 齐国虎[1] 刘志平[1] 

机构地区：[1]中国电子科技集团公司第十三研究所,石家庄050051

出　　处：《微纳电子技术》2011年第3期155-158,共4页Micronanoelectronic Technology

摘　　要：利用国产SiC外延材料和自主开发的SiC器件工艺加工技术,实现了SiC微波功率器件在S波段连续波功率输出大于10W、功率增益大于9dB、功率附加效率不低于35%的性能样管,初步显现了SiC器件在S波段连续波大功率、高增益方面的优势。与以往的硅微波功率器件相比,在同样的频率和输出功率下,SiC微波功率器件的体积不到Si器件的1/7,重量不到Si器件的20%,其功率增益较Si器件提高了3dB以上,器件效率也得到了相应的提高。同时由于SiC微波功率器件的输入、输出阻抗要明显高于Si微波功率器件,在一定程度上可以简化或不用内匹配网络来得到比较高的微波功率增益,这就为器件的小体积、低重量奠定了基础,也为器件的大功率输出创造了条件。The SiC MESFET devices were fabricated with the domestic SiC epitaxial materials and self-developed device process.The CW SiC devices show the advantages of high power and high gain,such as more than 10 W CW output power,larger than 9 dB power gain and no less than 35% power-added efficiency at S-band.Compared with the previous Si microwave power devices,the volume of the SiC devices is less than 1/7 and the weight less than 20% of Si devices at the same frequency and output power.The gain of SiC devices increases more than 3 dB compared to Si devices and the efficiency is also improved.Because the input and output impedances of SiC devices are obviously higher than those of Si devices,the internally-matched network can be simplified or even removed and the higher RF power gain can be arrived.It means that the small volume and low weight of the devices can realize the higher power output.

关 键 词：碳化硅 功率器件 连续波 内匹配 微波 

分 类 号：TN386.3[电子电信—物理电子学] TN304.24