用光电灵敏度法研究a-Si:H中的电荷放大效应  

INVESTIGATION OF CHARGE INTENSIFICATION EFFECT IN a-Si:H BY MEANS OF PHOTOELECTRIC SENSITIVITY METHOD

作　　者：海宇涵[1] 海灏[2] 奚中和[3] 张蔷[4] 

机构地区：[1]中国科学院电子学研究所,北京100080 [2]南开大学,天津300071 [3]北京大学,北京100871 [4]北京联合大学,北京100101

出　　处：《电子科学学刊》1999年第5期686-691,共6页

基　　金：国家自然科学基金(批准号 69676016)

摘　　要：测量了缝电极和梳形电极ａ－Ｓｉ：Ｈ样品的光伏安特性和光电灵敏度，撮由光电灵敏度计算电荷放大增益的方法，由此法测现的ａ－Ｓｉ：Ｈ的电荷放大增益，在１０＾５Ｖ／ｃｍ电场下，高达４．３×１０＾３、本文从能态图讨论了ａ－Ｓｉ：Ｈ中电荷放大效应的产生过程。由测量的增产佃值计算了电子迁移率与寿命之积。The photocurrent-voltage characteristics and photoelectric sensitivity of a-Si:H samples with slit and comb electrodes are measured. A method for calculating the charge intensifying gain from the photoelectric sensitivity is proposed. The obtained charge intensifying gain of a-Si:H under an electric field of 105 V/cm with this method is as high as 4.3×103. The generation process of the charge intensification effect in a-Si:H is discussed on the basis of the energy level diagram. And the product of electron's mobility and its lifetime is calculated from the measured values of the gains.

关 键 词：非晶硅 电荷放大效应 光电灵敏度法 

分 类 号：TN304.07[电子电信—物理电子学] TN304.8