电场对脉冲激光沉积纳米Si晶粒尺寸和面密度分布的影响  

Influence of External Electric Field on the Size and Area Density of Si Nanoparticles Prepared by Pulsed Laser Ablation

作　　者：王英龙[1] 陈超[1] 丁学成[1] 褚立志[1] 邓泽超[1] 

机构地区：[1]河北大学物理科学与技术学院,河北保定071002

出　　处：《河北大学学报（自然科学版）》2011年第1期20-23,41,共5页Journal of Hebei University(Natural Science Edition)

基　　金：国家自然科学基金资助项目(10774036);河北省自然科学基金资助项目(E2008000631);河北大学自然科学基金资助课题

摘　　要：为了研究外加电场对脉冲激光沉积纳米Si晶粒的影响,采用XeCl准分子激光器,烧蚀高阻抗单晶Si靶,在10Pa氩气环境下,调整外加电压的强度,沉积制备了一系列Si薄膜.X线衍射(XRD)谱仪、拉曼(Raman)谱、扫描电子显微镜(SEM)图像均显示纳米Si晶粒已经形成,随着靶衬间距的增加,所形成的纳米Si晶粒的平均尺寸和面密度分布均呈现先增大后减小的变化趋势,并且二者都在1.3cm处达到最大值;同时随着外加电压的增大,衬底上纳米Si晶粒消失的位置离靶距离变短.从传输动力学角度,对实验结果进行了定性分析.In order to study the influence of external electric field on Si nanoparticles prepared by pulsed laser ablation,the single crystalline Si target with high resistivity was ablated by a XeCl excimer laser in high pure Ar gas under the ambient pressure of 10 Pa,the external electric field was modulated to synthesize Si films.The X-ray diffraction,Raman spectras and the scan electron microscopy（SEM） images indicated that the Si nanoparticles were formed.With increasing target-substrate distance,the average size of Si nanoparticles first increased,reached its maximum at 1.3 cm,and then decreased.In addition,with increasing the external electric field,the position of Si nanoparticles disappeared away from the target diminished.The transfer dynamics were used to analyze the experiment results qualitatively.

关 键 词：纳米SI晶粒 激光烧蚀 外加电场 平均尺寸 

分 类 号：O484.1[理学—固体物理]