基于深亚微米CMOS工艺改进的电荷放大器的噪声模型  

Enhanced charge sensitive amplifier noise model based on deep submicron CMOS processing

作　　者：李翔宇[1] 张琦[1] 孙义和[1] 

机构地区：[1]清华大学微电子学研究所,清华信息科学与技术国家实验室,北京100084

出　　处：《清华大学学报（自然科学版）》2010年第11期1776-1780,1784,共6页Journal of Tsinghua University(Science and Technology)

摘　　要：基于深亚微米CMOS工艺对粒子探测器读出电荷灵敏放大器电路的噪声进行了优化,计算了输入管的所有有关的噪声并考虑了非输入管噪声及稳定性影响输入的因素,提出了一种更精确的电路噪声模型,可在现有的EKV模型应用基础上,对MOS管的各个工作区完成解析计算且是连续的,用以优化输入管的尺寸和工作点,给出输入管的栅极电容的优值的匹配条件,方便于分析和设计。在0.18μm CMOS工艺下对模型进行比较实验验证,表明计算精度比用传统方法有较明显优势。Deep submicron processing is used to optimize a charge sensitive amplifier＇s noise response.A more accurate input MOSFET noise model based on a simplified EKV model was developed that considers not only the input transistor noise but also the impact of the non-input transistor noise and stability requirements.The model gives a continuous,analytical result from the weak inversion region to the strong inversion region.Thus,the model can be used to conveniently optimize the input MOSFET size and operating point.The optimum input capacitance can also be found which can not be found theoretically.Comparisons based on a 0.18 μm design show that this model has advantages over the traditional method.

关 键 词：粒子探测器系统 电荷灵敏放大器 深亚微米工艺 噪声优化 EKV模型 

分 类 号：TN4[电子电信—微电子学与固体电子学]