氧分压对掺钼氧化铟透明导电薄膜光电性能的影响  

Effect of oxygen partial pressure on the Optical and Electrical properties of IMO thin films

作　　者：袁果[1] 黎建明[1] 张树玉[1] 刘伟[1] 闫兰琴[1] 

机构地区：[1]北京国晶辉红外光学科技有限公司北京有色金属研究总院,北京100088

出　　处：《功能材料与器件学报》2011年第1期46-50,共5页Journal of Functional Materials and Devices

摘　　要：采用射频磁控反应溅射法在k9玻璃衬底上制备了In2O3:Mo(IMO)透明导电薄膜,分析了不同氧分压条件下IMO薄膜的晶体结构、化学成分及光电性能。结果表明:不同氧分压下制备的IMO薄膜具有不同晶粒的取向性;随着氧分压的增加,薄膜的载流子浓度、载流子迁移率先增加后减小;薄膜的电阻率呈现先增加再减少然后再增加的趋势。在可见及近红外区,有氧气氛下制备的IMO薄膜的平均透过率大于80%以上,并随氧分压的升高而增大。Mo-doped Indium Oxide Thin films（IMO） were prepared on k9 glass substrates by radio frequency reactive magnetron sputtering.The effect of oxygen partial pressure on the optical and electrical properties of IMO thin films was studied.The results indicate that IMO thin films have different preferred orientation at different oxygen partial pressure.With the increase of the oxygen partial pressure,the carrier concentration and mobility of IMO thin film firstly increase and then decrease,but its resistivity shows an increase-derease-increase trend.The average optical transmittance of IMO films prepared in oxygen are over 80% in the visible and near infrared region and will increase with the oxygen partial pressure increasing.

关 键 词：掺钼氧化铟薄膜 氧分压 电学性能 光学性能 

分 类 号：TB[一般工业技术]