红外探测器材料和HgCdTe材料的发展现状  

Infrared Detector Materials and Present Situation of MCT

作　　者：宋炳文[1] 

机构地区：[1]昆明物理研究所,云南昆明650223

出　　处：《红外技术》1999年第5期1-5,共5页Infrared Technology

摘　　要：简要介绍了主要的红外探测器材料，包括半导体光电探测器材料、热释电材料和热敏电阻材料。回顾了HgCdTe材料的发展历史和现状，液相外延、分子束外延和金属有机物汽相外延是目前生长HgCdTe薄膜的3种主要技术。作者认为，薄膜材料是今后红外探测器材料的主要研究课题。Main inflared detector materials induding semiconductor photoelectric detector materials,pyroelectric crystals and thermistor materials are described briefly. The development history and present situation of HgCdTe material were reviewed. The liquid phase epitaxy, molecular beam epitaxy and metalorganic vapor phase epitaxy are three main techniques of grown HgCdTe films at present.Author's opion is that the growth of film materials is a main project from now on for IR detector materials.

关 键 词：材料 碲镉汞 MOVPE 红外探测器 

分 类 号：TN213[电子电信—物理电子学] TN215.04