A millimeter wave large-signal model of GaAs planar Schottky varactor diodes  

作　　者：董军荣 黄杰 田超 杨浩 张海英 

机构地区：[1]Institute of Microelectronics,Chinese Academy of Sciences

出　　处：《Journal of Semiconductors》2011年第3期49-53,共5页半导体学报（英文版）

基　　金：Project supported by the National Natural Science Foundation of China(No.60806024)

摘　　要：A millimeter wave large-signal model of GaAs planar Schottky varactor diodes based on a physical analysis is presented.The model consists of nonlinear resistances and capacitances of the junction region and external parasitic parameters.By analyzing the characteristics of the diode under reverse and forward bias,an extraction procedure of all of the parameters is addressed.To validate the newly proposed model,the PSVDs were fabricated based on a planar process and were measured using an automatic network analyzer.Measurement shows that the model exactly represents the behavior of GaAs PSVDs under a wide bias condition from -10 to 0.6 V and for frequencies up to 40 GHz.A millimeter wave large-signal model of GaAs planar Schottky varactor diodes based on a physical analysis is presented.The model consists of nonlinear resistances and capacitances of the junction region and external parasitic parameters.By analyzing the characteristics of the diode under reverse and forward bias,an extraction procedure of all of the parameters is addressed.To validate the newly proposed model,the PSVDs were fabricated based on a planar process and were measured using an automatic network analyzer.Measurement shows that the model exactly represents the behavior of GaAs PSVDs under a wide bias condition from -10 to 0.6 V and for frequencies up to 40 GHz.

关 键 词：GAAS PSVDs large-signal model parameter extraction 

分 类 号：TN311.7[电子电信—物理电子学]