多孔硅光致发光的非线性光学特性  

Nonlinear Optical Characteristic of Photolum inescencefrom Porous Silicon

作　　者：任丙彦[1] 刘彩池[1] 张颖怀 崔德升 王水凤[2] 曾庆城[2] 

机构地区：[1]河北工业大学材料研究中心,天津300130 [2]南昌大学物理系,南昌330047

出　　处：《光学学报》1999年第8期1138-1141,共4页Acta Optica Sinica

基　　金：河北省自然科学基金

摘　　要：采用电化学腐蚀法制备多孔硅（ Ｐ Ｓ）， 测量了多孔硅在近红外光（８００ ｎｍ ）激发下的光致发光（ Ｐ Ｌ）谱和光致发光激发（ Ｐ Ｌ Ｅ）谱， 结果表明多孔硅具有良好的上转换荧光特性， 并随着存放时间的延长， 在一定期限内峰值强度有明显的增强。这种非线性光学响应的增强， 被认为与空间量子限制效应作用下局域束缚激子被激发有关， 光致发光谱的多峰结构表明多孔硅中存在多种发光中心。用量子限制／发光中心模型可以解释本实验结果。The photolum inescence ( P L) spectra and photolum inescence excitation ( P L E)spectra under near infrared (800 nm ) excitation from porous silicon ( P S) prepared by elec trochem ical anodization m ethod are m easured. The results show that P S has efficient in frared upconversion lum inescence, and the peak intensity increased obviously as the reservedtim e prolonged. This nonlinear optical response enhancem ent effect is related to the excitedlocal binded exciton interacted by space quantum confined effect. The m ultipeak in P L spec tra show that there are m any kinds of different lum inescence centers.

关 键 词：多孔硅 光致姚 发光机理 非线性光学 

分 类 号：TN204[电子电信—物理电子学]